The last visit was to “Atomic Layer Deposition (ALD) lab”, in which scientist discussed about Atomic Layer Deposition (ALD) which is self-limiting film growth method which is characterized by the alternate exposure of chemical species in layer-by-layer manner and told ALD consists of four steps which are as following:
1) Metal precursor exposure,
2) Evacuation or purging of the precursors and any byproducts from the chamber,
3) Exposure of the other reactant species (non-metal precursor), for example nitrogen containing reducing agents for
nitrides or reducing agents for metals.
4) Evacuation or purging of the reactants and byproduct molecules from the chamber and its various applications. |